Room temperature oxidation of lead-indium alloy films
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Auteurs : RBID : ISTEX:11664_1975_Article_BF02660316.pdfEnglish descriptors
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Abstract
The kinetics of growth of thin (14 to 40Å) oxide layers on lead-indium alloys was investigated ellipsometrically, using: 3000Å thick films at 23°C; and oxygen exposures at 760 torr for times ranging from five minutes to five days. Assuming that the oxide layer is comprised of a two-phase mixture of PbO and In2O3 having a negligible extinction coefficient made it possible to estimate the oxide composition from the ellipsometrically-obtained oxide refractive index. Under these oxidizing conditions, the volume fraction of PbO in the oxide mixture decreases from a value of unity for pure lead to zero for alloys containing more than 30 at. percent In, in agreement with the Auger Electron Spectroscopy results of Chou and coworkers. The oxidation rate equals a exp (X1/X), where α and X1 will be seen to vary complexly with alloy composition. A theoretical explanation of these results is also presented.
DOI: 10.1007/BF02660316
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Komarek</name><affiliation><mods:affiliation>IBM Research Laboratory, 95193, San Jose, California, </mods:affiliation><wicri:noCountry code="subField"></wicri:noCountry></affiliation><affiliation wicri:level="1"><mods:affiliation>Inst. for Inorganic Chemistry, University of Vienna, Vienna, Austria</mods:affiliation><country xml:lang="fr">Autriche</country><wicri:regionArea>Inst. for Inorganic Chemistry, University of Vienna, Vienna</wicri:regionArea><wicri:noRegion>Vienna</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:11664_1975_Article_BF02660316.pdf</idno><date when="1975">1975</date><idno type="doi">10.1007/BF02660316</idno><idno type="wicri:Area/Main/Corpus">000833</idno><idno type="wicri:Area/Main/Curation">000833</idno><idno type="wicri:Area/Main/Exploration">000996</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ellipsometry</term><term>Oxidation</term><term>Pb-In alloy films</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">The kinetics of growth of thin (14 to 40Å) oxide layers on lead-indium alloys was investigated ellipsometrically, using: 3000Å thick films at 23°C; and oxygen exposures at 760 torr for times ranging from five minutes to five days. Assuming that the oxide layer is comprised of a two-phase mixture of PbO and In2O3 having a negligible extinction coefficient made it possible to estimate the oxide composition from the ellipsometrically-obtained oxide refractive index. Under these oxidizing conditions, the volume fraction of PbO in the oxide mixture decreases from a value of unity for pure lead to zero for alloys containing more than 30 at. percent In, in agreement with the Auger Electron Spectroscopy results of Chou and coworkers. The oxidation rate equals a exp (X1/X), where α and X1 will be seen to vary complexly with alloy composition. A theoretical explanation of these results is also presented.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="900fd6efc74254fd3e86ce39aec9be3239e79979"><titleInfo lang="eng"><title>Room temperature oxidation of lead-indium alloy films</title></titleInfo><name type="personal"><namePart type="given">J. M.</namePart><namePart type="family">Eldridge</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>IBM Research Laboratory, 95193, San Jose, California, </affiliation></name><name type="personal"><namePart type="given">D. W.</namePart><namePart type="family">Dong</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>IBM Research Laboratory, 95193, San Jose, California, </affiliation><affiliation>IBM Thomas J. Watson Research Center, 10598, Yorktown Heights, New York, </affiliation></name><name type="personal"><namePart type="given">K. L.</namePart><namePart type="family">Komarek</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>IBM Research Laboratory, 95193, San Jose, California, </affiliation><affiliation>Inst. for Inorganic Chemistry, University of Vienna, Vienna, Austria</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, New York</publisher><dateCreated encoding="w3cdtf">1975-03-21</dateCreated><dateValid encoding="w3cdtf">2007-06-24</dateValid><copyrightDate encoding="w3cdtf">1975</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">The kinetics of growth of thin (14 to 40Å) oxide layers on lead-indium alloys was investigated ellipsometrically, using: 3000Å thick films at 23°C; and oxygen exposures at 760 torr for times ranging from five minutes to five days. Assuming that the oxide layer is comprised of a two-phase mixture of PbO and In2O3 having a negligible extinction coefficient made it possible to estimate the oxide composition from the ellipsometrically-obtained oxide refractive index. Under these oxidizing conditions, the volume fraction of PbO in the oxide mixture decreases from a value of unity for pure lead to zero for alloys containing more than 30 at. percent In, in agreement with the Auger Electron Spectroscopy results of Chou and coworkers. The oxidation rate equals a exp (X1/X), where α and X1 will be seen to vary complexly with alloy composition. A theoretical explanation of these results is also presented.</abstract><subject lang="eng"><genre>Key words</genre><topic>Ellipsometry</topic><topic>Pb-In alloy films</topic><topic>oxidation</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>JEM</title></titleInfo><titleInfo><title>Journal of Electronic Materials</title><partNumber>Year: 1975</partNumber><partNumber>Volume: 4</partNumber><partNumber>Number: 6</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1975-12-01</dateIssued><copyrightDate encoding="w3cdtf">1975</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Optical and Electronic Materials</topic><topic>Characterization and Evaluation of Materials</topic><topic>Solid State Physics and Spectroscopy</topic><topic>Electronics and Microelectronics, Instrumentation</topic></subject><identifier type="issn">0361-5235</identifier><identifier type="issn">Electronic: 1543-186X</identifier><identifier type="matrixNumber">11664</identifier><identifier type="local">IssueArticleCount: 7</identifier><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1975</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02660316</identifier><identifier type="matrixNumber">Art3</identifier><identifier type="local">BF02660316</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>1191</start><end>1205</end></extent></part><recordInfo><recordOrigin>American Institute of Mining, Metallurgical, and Petroleum Engineers, Inc, 1975</recordOrigin><recordIdentifier>11664_1975_Article_BF02660316.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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